Plasma etching

Plasma etching

Attacking with reactive ions is a technology employed in micro and nanomanufacture with characteristics that differ from conventional wet chemistry techniques. With this type of attack low-pressure (high-vacuum) plasma is generated using an electromagnetic field. The high-energy plasma ions attack the surface of the substrate and react with it.

At TEKNIKER selective attacks are carried out with silicon, oxides and nitrides on substrates of up to 4 inches employing an inductively-coupled plasma, employing various gases (SF6, C4F8, CHF3, and so on). It is also possible to undertake cleaning processes, eliminating the remaining layer in NIL processes, and activating surfaces using oxygen plasma.

The most outsourcing characteristics are the following:

  1. Physical-chemical process in which the isotropy/anisotropy is controllable.
  2. Great range of materials to attack.
  3. Possibility of deep attacks using the Bosch process (plasma attacks and passivation alternatives).

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    Attacking with reactive ions is a technology employed in micro and nanomanufacture with characteristics that differ from conventional wet chemistry techniques. With this type of attack low-pressure (high-vacuum) plasma is generated using an electromagnetic field. The high-energy plasma ions attack the surface of the substrate and react with it.

    [fase_1] => [fase_2] => [fase_3] => [fase_4] => [texto_2] =>

    At TEKNIKER selective attacks are carried out with silicon, oxides and nitrides on substrates of up to 4 inches employing an inductively-coupled plasma, employing various gases (SF6, C4F8, CHF3, and so on). It is also possible to undertake cleaning processes, eliminating the remaining layer in NIL processes, and activating surfaces using oxygen plasma.

    The most outsourcing characteristics are the following:

    1. Physical-chemical process in which the isotropy/anisotropy is controllable.
    2. Great range of materials to attack.
    3. Possibility of deep attacks using the Bosch process (plasma attacks and passivation alternatives).
    [texto_tabla] => [enlace_flickr] => https://www.flickr.com/photos/teknikerik4/sets/72157648291763244/ [enlace_youtube] => https://www.youtube.com/playlist?list=PLdI9ptv1PWEzyrR3vQdyirdnMfE_8KX2u [enlace_issuu] => [enlace_slideshare] => [seo_h1] => Plasma etching [seo_url] => plasma-etching [seo_title] => Plasma etching - TEKNIKER [seo_desc] => Attacking with reactive ions is a technology employed in micro and nanomanufacture with characteristics that differ from conventional wet chemistry techniques. [imagenes] => [enlaces] => [publicaciones] => [sectores] => Array ( [0] => Array ( [titulo] => Renewable energy [seo_url] => renewable-energy [imagen] => energias_renovables.svg ) [1] => Array ( [titulo] => Machine tools and manufacturing [seo_url] => machine-tools-and-manufacturing [imagen] => maquina_herramienta.svg ) ) [soluciones] => Array ( [0] => Array ( [titulo] => Sensor devices [seo_url] => sensor-devices [imagen] => ST_DispositivosSensores_808x450px_icono.jpg ) ) [equipamiento] => Array ( [0] => Array ( [id] => 4 [titulo] => Oxford Plasmalab 80+ system of reactive ionic attack [imagen] => Sistema_Ataque_Ionico_Reactivo_Oxford_Plasmalab_80.jpg [texto] =>

    CHARACTERISTICS OF THE EQUIPMENT

    • Substrates of up to 4 inches
    • Refrigeration using helium
    • Variety of plasmas: SF6, C4F8, CHF3, O2, Ar

    EXPERTISE

    • Attacks on silicon, glass and polymers
    • Deep attacks employing combined multiplexed processes of passivation and attack
    • Attacks on a nanometric scale.
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Industrial sectors